Accurate equivalent circuit model of deep trench capacitors by numerical simulation and analytical calculation

Author

Fathnan, A.A. ; Kumar, Vipin ; Yang, Songping ; Sheu, G.

Author_Institution

Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan

fYear

2013

fDate

25-26 Feb. 2013

Firstpage

71

Lastpage

74

Abstract

This paper presents an analytical model of y-parameters for trench capacitors devices. 2-d poisson´s solution is used, which gives the closed form solutions of the potential and electrical field distributions as a function of the structure parameters and top electrode bias. Dependence of substrate equivalent series resistance on current path length of top electrode to ground is also simulated. Optimum high-capacitance and low series resistance devices is proposed. Analytical results are in a good agreement with simulation results obtained by sentaurus and previous experimental data.

Keywords

capacitors; equivalent circuits; numerical analysis; analytical calculation; closed form solutions; current path length; deep trench capacitors; electrical field distributions; electrode bias; equivalent circuit model; low series resistance devices; numerical simulation; optimum high-capacitance; potential field distributions; structure parameters; substrate equivalent series resistance; top electrode; y-parameter analytical model; Capacitance; Capacitors; Electrodes; Equivalent circuits; Integrated circuit modeling; Mathematical model; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on

Conference_Location

Kaohsiung

Print_ISBN

978-1-4673-3036-7

Type

conf

DOI

10.1109/ISNE.2013.6512291

Filename

6512291