DocumentCode
2124160
Title
Fabrication of InP-based HBT integrated circuits
Author
Thomas, S., III ; Fields, C.H. ; Sokolich, M. ; Kiziloglu, K. ; Chow, D.
Author_Institution
HRL Labs., Malibu, CA, USA
fYear
2000
fDate
2000
Firstpage
286
Lastpage
289
Abstract
HRL Laboratories supports three versions of InP-based HBT IC technologies. The first technology, based on 2.0 μm minimum feature size, began development in the late ´80s and has been pursued extensively in the ´90s. This technology provides transistors with 75 GHz Ft and 150 GHz Fmax. The second technology, based on more aggressive 1.0 μm minimum feature size, provides transistors with 160 GHz Ft and 180 GHz Fmax. The third technology integrates resonant tunneling diodes (RTDs) with the 2.0 μm minimum feature size HBT process
Keywords
Bipolar integrated circuits; Heterojunction bipolar transistors; III-V semiconductors; Indium compounds; Integrated circuit technology; InP; InP HBT integrated circuit; fabrication technology; heterojunction bipolar transistor; resonant tunneling diode; Fabrication; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Integrated circuit technology; Integrated circuit yield; Isolation technology; Laboratories; MODFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location
Williamsburg, VA
ISSN
1092-8669
Print_ISBN
0-7803-6320-5
Type
conf
DOI
10.1109/ICIPRM.2000.850288
Filename
850288
Link To Document