Metamorphic HEMT 0.5 μm low cost high performance process on 4" GaAs substrates

Author

Benkhelifa, F. ; Chertouk, M. ; Walther, M. ; Lösch, R. ; Weimann, G.

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany

fYear

2000

fDate

2000

Firstpage

290

Lastpage

293

Abstract

Fabrication, performance and uniformity of 0.5 μm gate length, passivated InAlAs/InGaAs metamorphic HEMTs (MHEMT) on 4 inch GaAs substrates are reported. Excellent uniformity of DC and HF characteristics across 4" wafers was achieved. An f_T of 53 GHz and an f_max of 200 GHz was obtained for 0.5 μm gate length devices. The standard deviation of the threshold voltage is 23 to 35 mV from wafer to wafer. These results demonstrate the potential of a low cost technology to fabricate MHEMTs on 4" GaAs substrates using i-line steppers to manufacture in production volumes

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 0.5 micron; 4 inch; DC characteristics; GaAs; GaAs substrate; HF characteristics; InAlAs-InGaAs; InAlAs/InGaAs metamorphic HEMT; fabrication technology; i-line stepper; passivation; threshold voltage; volume production; Costs; Fabrication; Gallium arsenide; Hafnium; Indium compounds; Indium gallium arsenide; Manufacturing; Production; Threshold voltage; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850289

Filename

850289