High speed InP/InGaAs uni-traveling-carrier photodiodes

Author

Shimizu, Naofumi ; Muramoto, Yoshifumi ; Miyamoto, Yutaka ; Ishibashi, Tadao

Author_Institution

NTT Network Innovation Labs., Kanagawa, Japan

fYear

2000

fDate

2000

Firstpage

313

Lastpage

316

Abstract

High-speed and high-saturation output InP-based uni-traveling-carrier photodiodes (UTC-PDs) have been developed. The structural feature of the devices is that the diode is configured with a p-type photo-absorption layer and a wide-gap electron collector layer. Fabricated UTC-PDs yielded a 3-dB bandwidth of over 100 GHz with operating current density of 200 kV/cm² or over. This paper examines the bandwidth and RF saturation characteristics of UTC-PDs. We also present an optical receiver utilizing a UTC-PD for high-speed fiber-optic communication systems

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical receivers; photodiodes; 100 GHz; InP-InGaAs; InP/InGaAs uni-traveling-carrier photodiode; RF saturation; bandwidth; current density; high-speed fiber optic communication system; optical receiver; Bandwidth; Current density; Diodes; Electrons; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Optical receivers; Photodiodes; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850295

Filename

850295