• DocumentCode
    2124707
  • Title

    Solution CBr4: an improved MOVPE dopant source

  • Author

    Rushworth, S.A. ; Smith, L.M. ; Blunt, R.T. ; Davies, J.I. ; Hunjan, S. ; Joel, A.

  • Author_Institution
    Epichem Ltd., Bromborough, UK
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    361
  • Lastpage
    363
  • Abstract
    Carbon has been widely used as a p-type dopant in AlGaAs and InGaAs alloys due to its lower diffusion rate, higher solubility and lower memory effect than beryllium, magnesium and zinc. Carbon tetrabromide (CBr4) has become increasing favoured out of all the halocarbons identified as useful source materials for providing the high doping levels required for HBT´s. However consistent transport of this relatively involatile compound has been highlighted as problematic under normal operating conditions due to its solid nature. The optimum approach to improve dosimetry control of the other major solid MOVPE source, Trimethylindium (TMI), has been to dissolve it up in an extremely involatile solvent, resulting in solution TMITM. A similar methodology has been applied here in the case of CBr4. An investigation of the transport characteristics of solution CBr4 has been performed using an ultrasonic analyser to monitor the pick up of CBr4 vapours, and a comparison has been made with data for solid CBr4. Solution CBr4 has been used to dope a number of structures and improved reproducibility and control using this precursor has been demonstrated
  • Keywords
    organic compounds; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; AlGaAs; InGaAs; MOVPE dopant source; halocarbons; higher solubility; lower diffusion rate; lower memory effect; p-type dopant; solution CBr4; transport characteristics; Doping; Dosimetry; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Magnesium; Organic materials; Solids; Solvents; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
  • Conference_Location
    Williamsburg, VA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6320-5
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2000.850307
  • Filename
    850307