DocumentCode :
2125391
Title :
Surface pattern formation and the volatile component loss of heat treated metallisations of InP
Author :
Mojzes, I. ; Kovacs, B. ; Kun, I. ; Mate, L. ; Schuszter, M. ; Dobos, L.
Author_Institution :
Dept. of Electron Technol., Tech. Univ. Budapest, Hungary
Volume :
2
fYear :
1996
fDate :
9-12 Oct 1996
Firstpage :
629
Abstract :
Palladium based metal systems can be used to make ohmic contacts to AIIIBV compound semiconductors. A covering layer of gold is advantageous from the point of view of bonding as well. Gold palladium layers were studied on InP substrates. Samples were annealed in the vacuum chamber of a scanning electron microscope (SEM) and the volatile component loss (phosphorus) was monitored by a quadrupole mass spectrometer. The changes of the surface morphology were studied using the SEM images. It means that the change of surface morphology and the volatile component loss were monitored simultaneously. In the case of Pd/AIIIBV samples a single characteristic peak due to the interaction taking place between the metallization and the substrate was observed on the volatile component loss vs. temperature curve. In this temperature range characteristic pattern formation can be detected. This surface morphology shows fractal behaviour. It is supposed that the giant volatile component loss originating from the interaction between the metallization and the substrate can be described using percolation theory
Keywords :
III-V semiconductors; annealing; fractals; gold; heat treatment; indium compounds; metallisation; ohmic contacts; palladium; percolation; scanning electron microscopy; surface topography; Au; Au-InP; InP; Pd; Pd-InP; SEM; annealing; bonding; fractal behaviour; heat treated metallisations; ohmic contacts; percolation theory; quadrupole mass spectrometry; surface morphology; surface pattern formation; volatile component loss; Bonding; Gold; Metallization; Monitoring; Ohmic contacts; Palladium; Pattern formation; Scanning electron microscopy; Substrates; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
Type :
conf
DOI :
10.1109/SMICND.1996.557468
Filename :
557468
Link To Document :
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