Tin dioxide sol-gel derived thin films deposited on porous silicon

Author

Cobianu, C. ; Savaniu, C. ; Buiu, O. ; Dascalu, D. ; Zaharescu, Maria ; Parlog, C. ; van den Berg, A. ; Pecz, B.

Author_Institution

Inst. of Microtechnol., Bucharest, Romania

Volume

2

fYear

1996

fDate

9-12 Oct 1996

Firstpage

633

Abstract

SnO₂ and SnO₂:Sb sol-gel derived thin films have been prepared from tin (II) ethylhexanoate and tin (IV) ethoxide precursors (the later not reported before) in order to be used for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on different types of substrates (Si, SiO₂/Si). By energy dispersive X-ray spectroscopy (EDXS) performed on the cross section of the porosified silicon (PS) coupled with XTEM analysis, the penetration of the SnO₂ sol-phase in the nanometric pores followed by the SnO ₂ consolidation film in the pores of the PS, during subsequent annealing at 500°C has been experimentally proved

Keywords

X-ray chemical analysis; annealing; antimony; semiconductor growth; semiconductor materials; semiconductor thin films; sol-gel processing; tin compounds; transmission electron microscopy; 500 C; Si; SnO₂; SnO₂-Si; SnO₂:Sb; SnO₂:Sb-Si; XTEM analysis; annealing; consolidation; energy dispersive X-ray spectroscopy; gas sensing applications; nanometric pores; porous Si substrate; sol-gel derived thin films; tin (II) ethylhexanoate precursor; tin (IV) ethoxide precursor; transparent crack-free adherent layers; Annealing; Dispersion; Performance analysis; Semiconductor films; Semiconductor thin films; Silicon; Spectroscopy; Sputtering; Substrates; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1996., International

Conference_Location

Sinaia

Print_ISBN

0-7803-3223-7

Type

conf

DOI

10.1109/SMICND.1996.557469

Filename

557469