Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

Author

Mu-Chun Wang ; Jing-Zong Jhang ; Shea-Jue Wang ; Hsin-Chia Yang ; Wen-Shiang Liao ; Ming-Feng Lu ; Guo-Wei Wu ; Chuan-Hsi Liu

Author_Institution

Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan

fYear

2013

fDate

25-26 Feb. 2013

Firstpage

375

Lastpage

378

Abstract

Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion current flow for PMOSFETs mainly located in biaxial strained SiGe channel due to N-well bias. The related electrical characterizations with well biases were also exhibited.

Keywords

Ge-Si alloys; MOSFET; etching; nanoelectronics; semiconductor materials; CESL strained PMOSFET; N-well bias; SiGe; biaxial probing moving charge distribution; biaxial strained channel; body effect; compressive strained types; contact etching stop layer; electrical characterizations; inversion charge distribution; nanonode semiconductor strained engineering; qualitative analysis; sandwich embedded structure; tensile strained types; Logic gates; MOSFET; Silicon; Silicon germanium; Strain; Substrates; Threshold voltage; CESL; Si-capping layer; biaxial strain; body effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on

Conference_Location

Kaohsiung

Print_ISBN

978-1-4673-3036-7

Type

conf

DOI

10.1109/ISNE.2013.6512371

Filename

6512371