DocumentCode
2126366
Title
A monolithic MESFET transimpedance amplifier using active inductors
Author
Giannini, Franco ; Limiti, Ernesto ; Orengo, Giancarlo
Author_Institution
Dipartimento di Ingegneria Elettronica, UniversitÃ\xa0 di Roma "Tor Vergata", Via della Ricerca Scientifica, 00133, Roma, ITALY.
Volume
1
fYear
1996
fDate
6-13 Sept. 1996
Firstpage
195
Lastpage
198
Abstract
A transimpedance amplilfier realised in 0.5 ¿m GaAs MESFET monolithic technology has been designed using the Alenia foundry process. The amplilfier features nearly 50 dBQ transimpedance gain and better than ¿14 dB output match in a 50 MHz ¿3.2 GHz band: this results have been achieved employing active inductors to reduce chip size and to improve the amplifier´s performance.
Keywords
Active inductors; Bandwidth; Energy consumption; Frequency; Impedance matching; Inductance; MESFETs; Performance gain; Power amplifiers; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1996. 26th European
Conference_Location
Prague, Czech Republic
Type
conf
DOI
10.1109/EUMA.1996.337551
Filename
4138606
Link To Document