Title :
1996 Symposium on VLSI Technology. Digest of Technical Papers [Front Matter and Table of Contents]
Abstract :
Presents the front matter and table of contents from the conference proceedings.
Keywords :
CMOS integrated circuits; DRAM chips; EPROM; MOSFET; SRAM chips; VLSI; bipolar integrated circuits; dielectric thin films; integrated circuit interconnections; integrated circuit manufacture; integrated circuit reliability; isolation technology; lithography; microwave field effect transistors; mixed analogue-digital integrated circuits; silicon-on-insulator; 0.25 /spl mu/m MOSFETs; CVD metal interconnect; DRAMs; MOSFET structures; SOI circuit effects; SOI technology; SRAM technology; VLSI technology; advanced interconnects; bipolar technology; capacitors; channel engineering; flash technology; gate effects; low-k dielectrics; manufacturing; microwave MOSFETs; mixed signal technology; nonvolatile memories; patterning; reliability; shallow trench isolation; source-drain engineering; thin oxide; well engineering;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507772
