Title :
High performance 0.15 /spl mu/m single gate Co salicide CMOS
Author :
Yoshitomi, T. ; Ohguro, T. ; Saito, M. ; Ono, M. ; Morifuji, E. ; Momose, H.S. ; Iwai, H.
Author_Institution :
ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
A high performance 0.15 /spl mu/m single gate Co salicide CMOS technology have been developed by optimizing the fabrication conditions of pMOSFETs extension region. The gate delay of 19.8 psec was obtained with good suppression of short channel effect. At 0.12 /spl mu/m gate length, 11.4 psec, the fastest tpd ever reported, was observed although the short channel effects were significant at this moment. These results suggests that high performance single gate CMOS in sub-0.15 /spl mu/m region can be realized by further improving the extension conditions such as by using new doping techniques.
Keywords :
CMOS integrated circuits; cobalt compounds; integrated circuit metallisation; 0.15 micron; CoSi/sub 2/; doping technique; fabrication; gate delay; pMOSFET extension region; short channel effect; single gate Co salicide CMOS technology; CMOS technology; Delay effects; Doping; Fabrication; MOSFETs;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507783
