• DocumentCode
    2127696
  • Title

    Dielectric function evolution as Bruggeman method solution

  • Author

    Rotaru, Cristina ; Flueraru, C. ; Nastase, S. ; Rotaru, I.

  • Author_Institution
    Nat. Res. Dev. Inst. for Microtechnol., Bucharest, Romania
  • Volume
    2
  • fYear
    1997
  • fDate
    7-11 Oct 1997
  • Firstpage
    447
  • Abstract
    The ellipsometry is a proper technique for analyzing dielectric response of thin solid films, particularly for polycrystalline silicon. The behavior of dielectric function is usually analyzed by the Effective Medium Approximation (Bruggeman model), which gives three solution. The physical problem has only one solution. In this paper are discussed from a physical point of view the solutions of dielectric function
  • Keywords
    dielectric function; elemental semiconductors; ellipsometry; semiconductor thin films; silicon; Bruggeman method solution; Effective Medium Approximation; Si; dielectric function evolution; dielectric response; ellipsometry; polycrystalline Si; thin solid films; Dielectric thin films; Ellipsometry; Equations; Optical films; Optical refraction; Optical sensors; Optical surface waves; Silicon; Solids; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3804-9
  • Type

    conf

  • DOI
    10.1109/SMICND.1997.651243
  • Filename
    651243