Title :
Silicon RF devices fabricated by ULSI processes featuring 0.1-/spl mu/m SOI-CMOS and suspended inductors
Author :
Hisamoto, D. ; Tanaka, S. ; Tanimoto, T. ; Nakamura, Y. ; Kimura, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
High-performance RF devices were fabricated using standard Si ULSI processes. Suspended inductors and 0.1-/spl mu/m CMOS devices were integrated on an SOI wafer having a cavity beneath the devices. A high inductor resonance frequency of 19.6 GHz and a low 0.1-/spl mu/m SOI-NMOS noise figure as small as 0.8 dB at 2 GHz were obtained, which surpass presently available mobile telecommunication GaAs MESFETs in performance.
Keywords :
CMOS integrated circuits; UHF integrated circuits; ULSI; elemental semiconductors; inductors; integrated circuit technology; silicon; silicon-on-insulator; 0.1 micron; 0.8 dB; 19.6 GHz; 2 GHz; SOI CMOS; Si; Si RF devices; ULSI processes; suspended inductors; Gallium arsenide; Inductors; MESFETs; Noise figure; Radio frequency; Resonance; Resonant frequency; Silicon; Ultra large scale integration;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507810
