Title :
Surface segregation in pseudomorphic SixGe1-x crystals
Author :
Vasev, Andrei V. ; Chikichev, Ivan S. ; Chikichev, Sergei I.
Author_Institution :
Novosibirsk State Univ., Russia
Abstract :
Composition of the first atomic layer at the crystal-vacuum interface is calculated for coherent SiGe epilayers grown on Si and Ge substrates with (100) and orientations. Comparison with similar data for bulk unstrained alloy crystals reveals significant differences in segregation behaviour between pseudomorphic and bulk crystals
Keywords :
Ge-Si alloys; semiconductor epitaxial layers; semiconductor materials; surface segregation; SiGe; bulk unstrained alloy crystals; coherent SiGe epilayers; crystal-vacuum interface; first atomic layer; pseudomorphic SixGe1-x crystals; surface segregation; Atomic layer deposition; Capacitive sensors; Chemicals; Crystals; Equations; Germanium; Lattices; Open systems; Solid modeling; Thermodynamics;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651247
