Lattice misfit and elastic strain distribution in heteroepitaxial InP/InGaAs structure

We obtained a multilayer heteroepitaxial structure of In_0.53 Ga_0.47As-type deposed on (100) oriented InP substrate. We selected deliberately different thickness and doping concentrations of each layer for their potential applications in very high frequency bipolar transistors. A sequence of six epilayers were realized by vapour phase epitaxy. The characterization of crystallographic and semiconducting properties in correlation with technological processes is performed by TSC-method and by double crystal X-ray diffraction. We propose a kinematics model of X-ray diffraction in heteroepitaxial muitilayer structures of InP/InGaAs. It is based on a discontinuous lattice misfit and elastic strain distribution. The model fits well the rocking curves obtained for both (004) and (224) reflecting planes. The values of the lattice misfit and the elastic strains in the plane of lamellae were calculated