Title :
Random MOSFET parameter fluctuation limits to gigascale integration (GSI)
Author :
De, V.K. ; Xinghai Tang ; Meindl, J.D.
Author_Institution :
Microelectron. Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Intrinsic fluctuations in threshold voltage, subthreshold swing and drain current of ultra-small-geometry MOSFET´s due to random placement of dopant atoms in the channel are examined using novel physical models and a Monte-Carlo simulator. The characteristics of these intrinsic random device parameter fluctuations are shown to be strongly influenced, even without extrinsic channel length or oxide thickness variations, by the degree of DIBL in the target MOSFET. Limitations to level of integration in sub-0.1 /spl mu/m GSI technology are projected.
Keywords :
MOSFET; Monte Carlo methods; doping profiles; fluctuations; semiconductor device models; semiconductor doping; 0.1 micron; DIBL; Monte-Carlo simulation; dopant atom placement; drain current; gigascale integration; physical model; random device parameter fluctuations; subthreshold swing; threshold voltage; ultra-small-geometry MOSFET; Fluctuations; MOSFET circuits; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507851
