Mechanisms and characteristics of oxide charge detrapping in n-MOSFETs

We have used a GIDL current in an n-MOSFET to monitor oxide charge detrapping directly for the first time. An analytical model accounting for the temporal evolution of the GIDL current was developed. Two oxide trap discharging mechanisms, electron detrapping and hot hole injection, have been separately demonstrated. The field dependence of the detrapping times confirms that the electron detrapping is via field enhanced tunneling. Finally, we have shown the possibility of using this method to probe oxide trap growth characteristics under various hot carrier stress conditions.