DocumentCode
2128990
Title
Invited impact of VCSEL scaling on speed and bit energy for high speed interconnects
Author
Deppe, D. ; Zhao, G. ; Li, M. ; Yang, X.
Author_Institution
CREOL, College of Optics & Photonics, University of Central Florida, Orlando, FL 32816
fYear
2015
fDate
13-15 July 2015
Firstpage
139
Lastpage
140
Abstract
Removal of oxide layers from the VCSEL and incorporating AlAs in the low index mirror layers can dramatically decrease the VCSEL´s thermal resistance, and has been shown to increase the stimulated emission rate [1]. These can be scaled down to a much smaller size and maintain high efficiency [2]. Therefore with smaller size, the electrical parasitics can also be reduced.
Keywords
Bandwidth; Current measurement; Reliability; Stimulated emission; Temperature; Temperature measurement; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Summer Topicals Meeting Series (SUM), 2015
Conference_Location
Nassau, Bahamas
Print_ISBN
978-1-4799-7467-2
Type
conf
DOI
10.1109/PHOSST.2015.7248234
Filename
7248234
Link To Document