DocumentCode
2129555
Title
Bismuth-based semiconductors for mid-infrared photonic devices
Author
Sweeney, S.J. ; Marko, I.P. ; Jin, S.R. ; Hild, K. ; Batool, Z.
Author_Institution
Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey, GU2 7XH, UK
fYear
2015
fDate
13-15 July 2015
Firstpage
181
Lastpage
182
Abstract
Owing to the versatile band-structure made possible through the introduction of bismuth in III-V systems, we discuss the potential to produce efficient emitters and detectors in the mid-infrared based upon conventional GaAs and InP substrates.
Keywords
Bismuth; Gallium arsenide; Indium phosphide; Photonic band gap; Strain; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Summer Topicals Meeting Series (SUM), 2015
Conference_Location
Nassau, Bahamas
Print_ISBN
978-1-4799-7467-2
Type
conf
DOI
10.1109/PHOSST.2015.7248257
Filename
7248257
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