DocumentCode
2129681
Title
Mechanism of mechanical deterioration in silicon microcantilever induced by plasma process
Author
Tomura, Maju ; Huang, Chi-Hsein ; Samukawa, Seiji ; Yoshida, Yusuke ; Ono, Takahito ; Yamasaki, Satoshi
Author_Institution
Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan
fYear
2010
fDate
1-4 Nov. 2010
Firstpage
2534
Lastpage
2537
Abstract
We investigated the influences of the defects generated by plasma on a silicon (Si) microcantilever. The E´ center density of the microcantilever was drastically increased after Ar plasma irradiation. The mechanical characteristics, including resonant frequency (f) and the mechanical quality (Q) factor of a microcantilever were drastically decreased by plasma irradiation, which revealed that plasma irradiation deteriorated the mechanical characteristics of the micro element. Our results revealed that deterioration of f and Q factor depended on Young´s modulus of microcantilevers and the ratio of defect depth to microcantilevers thickness respectively. Furthermore, These results showed considerable impact on Micro- and Nano Electro-Mechanical Systems.
Keywords
cantilevers; elemental semiconductors; failure (mechanical); micromechanical devices; plasma applications; silicon; Young´s modulus; mechanical deterioration; mechanical quality factor; microelectromechanical system; nanoelectromechanical system; plasma irradiation; plasma process; resonant frequency; silicon microcantilever;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2010 IEEE
Conference_Location
Kona, HI
ISSN
1930-0395
Print_ISBN
978-1-4244-8170-5
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2010.5690474
Filename
5690474
Link To Document