• DocumentCode
    2129681
  • Title

    Mechanism of mechanical deterioration in silicon microcantilever induced by plasma process

  • Author

    Tomura, Maju ; Huang, Chi-Hsein ; Samukawa, Seiji ; Yoshida, Yusuke ; Ono, Takahito ; Yamasaki, Satoshi

  • Author_Institution
    Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan
  • fYear
    2010
  • fDate
    1-4 Nov. 2010
  • Firstpage
    2534
  • Lastpage
    2537
  • Abstract
    We investigated the influences of the defects generated by plasma on a silicon (Si) microcantilever. The E´ center density of the microcantilever was drastically increased after Ar plasma irradiation. The mechanical characteristics, including resonant frequency (f) and the mechanical quality (Q) factor of a microcantilever were drastically decreased by plasma irradiation, which revealed that plasma irradiation deteriorated the mechanical characteristics of the micro element. Our results revealed that deterioration of f and Q factor depended on Young´s modulus of microcantilevers and the ratio of defect depth to microcantilevers thickness respectively. Furthermore, These results showed considerable impact on Micro- and Nano Electro-Mechanical Systems.
  • Keywords
    cantilevers; elemental semiconductors; failure (mechanical); micromechanical devices; plasma applications; silicon; Young´s modulus; mechanical deterioration; mechanical quality factor; microelectromechanical system; nanoelectromechanical system; plasma irradiation; plasma process; resonant frequency; silicon microcantilever;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2010 IEEE
  • Conference_Location
    Kona, HI
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-8170-5
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2010.5690474
  • Filename
    5690474