Title :
Si-based GeSn edge-emitting LEDs with Sn compositions up to 8%
Author :
Du, Wei ; Ghetmiri, Seyed A. ; Zhou, Yiyin ; Mosleh, Abooz ; Naseem, Hameed ; Yu, Shui-Qing ; Tolle, John ; Margetis, Joe ; Soref, Richard A. ; Sun, Greg ; Li, Boahua
Author_Institution :
Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA
Abstract :
Characterization of GeSn edge-emitting LEDs has been conducted with Sn compositions up to 8%. Room temperature electroluminescence spectra and emission power were measured. A peak power of 50 mW was achieved with an 8%-Sn device.
Keywords :
Light emitting diodes; Photonic band gap; Silicon; Sun; Temperature measurement; Tin; Edge emitting; GeSn LED; Si photonics;
Conference_Titel :
Summer Topicals Meeting Series (SUM), 2015
Conference_Location :
Nassau, Bahamas
Print_ISBN :
978-1-4799-7467-2
DOI :
10.1109/PHOSST.2015.7248263
