A low-power low-voltage bandgap reference in CMOS

Author

Sun, Na ; Sobot, Robert

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Western Ontario, London, ON, Canada

fYear

2010

fDate

2-5 May 2010

Firstpage

1

Lastpage

5

Abstract

A low-voltage low-power bandgap voltage reference in 90nm CMOS is designed and simulated. The overall bandgap architecture is optimized to achieve high accuracy temperature and power supply independent voltage reference. It consists of the bandgap core circuit, op-amp, start-up circuit and output stage. The bandgap reference circuit provides reference voltage of 584.7mV ± 0.8mV with 1.2V ± 10% power supply and over -40°C to 125°C temperature ranges simultaneously. The total layout area including dummy structures is 100μm × 85μm.

Keywords

CMOS integrated circuits; low-power electronics; operational amplifiers; reference circuits; CMOS; bandgap architecture; bandgap core circuit; high accuracy temperature; low-voltage low-power bandgap voltage reference; op-amp; power supply independent voltage reference; size 90 nm; start-up circuit; temperature -40 C to 125 C; voltage 1.2 V; voltage 584.7 mV; CMOS integrated circuits; Photonic band gap; Power supplies; Temperature dependence; Temperature distribution; Transistors; Bandgap Voltage Reference; Low-Power; Low-Voltage; Op-Amp; Output Stage; Start-Up Circuit; analog IC;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (CCECE), 2010 23rd Canadian Conference on

Conference_Location

Calgary, AB

ISSN

0840-7789

Print_ISBN

978-1-4244-5376-4

Electronic_ISBN

0840-7789

Type

conf

DOI

10.1109/CCECE.2010.5575247

Filename

5575247