Title :
Quantum Hall sample characterization
Author :
Sakarya, H. ; Rietveld, G.
Author_Institution :
Tubitak, Gebze-Kocaeli, Turkey
Abstract :
This paper describes the initial results of a characterisation study of QHE samples performed at the NMi Van Swinden Laboratorium at the end of 1996. In this work, four different GaAs-based QHE samples were studied at different currents and temperatures.
Keywords :
III-V semiconductors; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; semiconductor heterojunctions; GaAs; GaAs-based samples; Hall voltage; QHE samples; current dependence; longitudinal resistance; temperature dependence; Battery charge measurement; Current measurement; Electrical resistance measurement; Laboratories; Magnetic field measurement; Magnetic fields; Protection; Temperature; Thermal variables measurement; Voltage;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2000 Conference on
Conference_Location :
Sydney, NSW, Australia
Print_ISBN :
0-7803-5744-2
DOI :
10.1109/CPEM.2000.851132
