DocumentCode :
2133380
Title :
PCB Ground-Parasitic Effects on a WiMAX Low-Noise Amplifier RFIC
Author :
Wu, J.M. ; Lo, C.W. ; Huang, B.Y. ; Yang, N.K. ; Li, S.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung, Taiwan
fYear :
2009
fDate :
24-26 Sept. 2009
Firstpage :
1
Lastpage :
3
Abstract :
This paper presents the printed circuit board (PCB) ground-parastic effects on the figure of merit of a WiMAX low noise amplifier (LNA) RFIC. The LNA RFIC is fabricated in 0.35-mum standard SiGe BiCMOS foundry process. The chip size is equal to 0.84 mm times 0.18 mm .The power consumption is 33.6 mW from the supply voltage of 3 V. The PCB ground-parasitic effects act as the source degeneration in the proposed WiMAX LNA and cause the degradation in noise figure (NF) and gain by 0.5 dB and 2.8 dB, respectively. The comparison of simulation and measurement shows good agreement.
Keywords :
BiCMOS integrated circuits; WiMax; low noise amplifiers; printed circuits; radiofrequency integrated circuits; BiCMOS foundry process; PCB ground-parasitic effect; WiMAX low-noise amplifier RFIC; power 33.6 mW; power consumption; printed circuit board; size 0.35 mum; voltage 3 V; BiCMOS integrated circuits; Circuit noise; Foundries; Germanium silicon alloys; Low-noise amplifiers; Noise figure; Printed circuits; Radiofrequency integrated circuits; Silicon germanium; WiMAX;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless Communications, Networking and Mobile Computing, 2009. WiCom '09. 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-3692-7
Electronic_ISBN :
978-1-4244-3693-4
Type :
conf
DOI :
10.1109/WICOM.2009.5303276
Filename :
5303276
Link To Document :
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