Title :
Dual-λ InP/AlGaInP quantum dot laser
Author :
Shutts, S. ; Smowton, P.M. ; Krysa, A.B.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
By optimizing the inhomogeneous properties of a QD structure we have created a monolithic dual-wavelength laser, sourcing spatially coherent emission between 650 and 730 nm, with independent control of the light output at each wavelength.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light coherence; quantum dot lasers; InP-AlGaInP; dual-wavelength quantum dot laser; inhomogeneous properties; light output; monolithic dual-wavelength laser; quantum dot structure; spatially coherent emission; wavelength 650 nm to 730 nm; Distributed feedback devices; Indium phosphide; Laser feedback; Quantum dot lasers; Temperature dependence; Temperature measurement; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4577-0828-2
DOI :
10.1109/ISLC.2012.6348339
