DocumentCode
2135146
Title
Achieving temperature-insensitive λ in InP quantum dot lasers
Author
Shutts, S. ; Smowton, P.M. ; Krysa, A.B.
Author_Institution
Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
92
Lastpage
93
Abstract
By characterizing the temperature dependence of gain peak wavelength we designed Edge-emitting lasers to minimise the temperature dependence of the emission wavelength to as low as 0.03 nm/K, between 7 and 107°C (280-380 K).
Keywords
III-V semiconductors; indium compounds; laser cavity resonators; quantum dot lasers; surface emitting lasers; InP; edge-emitting lasers; emission wavelength; gain peak wavelength; quantum dot lasers; temperature 7 degC to 107 degC; temperature dependence; temperature-insensitivity; Cavity resonators; Measurement by laser beam; Photonic band gap; Quantum dot lasers; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348343
Filename
6348343
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