DocumentCode
2135669
Title
Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers
Author
Kulkova, Irina V. ; Larsson, David ; Semenova, Elizaveta S. ; Yvind, Kresten
Author_Institution
Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
133
Lastpage
134
Abstract
We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mode locking; optical design techniques; optical fabrication; optical modulation; quantum well lasers; semiconductor optical amplifiers; semiconductor quantum wells; InAlGaAsP-InP; MQW electroabsorber modulator; high-quality butt-joint interfaces; monolithic passively-mode-locked lasers; optical design method; optical fabrication; quantum well semiconductor optical amplifier; wavelength 1.55 mum; Indium phosphide; Laser mode locking; Masers; Quantum well devices; Semiconductor optical amplifiers; Mode-locked lasers; selective area growth; semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348364
Filename
6348364
Link To Document