DocumentCode
2136368
Title
Ultra-low threshold current CW operation of photonic crystal nanocavity laser with InAlAs sacrificial layer
Author
Sato, Tomonari ; Takeda, Koji ; Shinya, Akihiko ; Nozaki, Kengo ; Taniyama, Hideaki ; Hasebe, Koichi ; Kakitsuka, Takaaki ; Notomi, Masaya ; Matsuo, Shinji
Author_Institution
NTT Photonics Labs., Atsugi, Japan
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
169
Lastpage
170
Abstract
An ultra-low threshold current of 24 μA was achieved for an electrically-driven photonic crystal nanocavity laser with an InAlAs sacrificial layer to reduce leakage current under continuous-wave operation at room temperature.
Keywords
III-V semiconductors; aluminium compounds; indium compounds; laser cavity resonators; leakage currents; nanophotonics; optical fabrication; photonic crystals; semiconductor lasers; InAlAs; current 24 muA; electrically-driven photonic crystal nanocavity laser; laser diodes; leakage current reduction; optical fabrication; room temperature; semiconductor sacrificial layer; temperature 293 K to 298 K; ultralow threshold current continuous-wave operation; Fiber lasers; Indium compounds; Indium phosphide; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348388
Filename
6348388
Link To Document