DocumentCode
2136378
Title
Mode localization in defect-free GaN-based bottom-up photonic quasicrystal lasers
Author
Wu, Tzeng-Tsong ; Chen, Chih-Cheng ; Chen, Hao-Wen ; Lu, Tien-Chang ; Wang, Shing-Chung ; Kuo, Cheng-Huang
Author_Institution
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2012
fDate
7-10 Oct. 2012
Firstpage
171
Lastpage
172
Abstract
GaN-based bottom-up photonic quasicrystal (PQC) lasers were realized and characterized. Photonic quasicrystal nanopillars were realized by nanoimprint technique and selective area growth. Highly localized mode was identified for the first time in GaN-based PQC lasers.
Keywords
III-V semiconductors; gallium compounds; nanolithography; nanophotonics; optical fabrication; photonic crystals; quasicrystals; semiconductor lasers; soft lithography; wide band gap semiconductors; GaN; PQC lasers; defect-free gallium nitride -based bottom-up photonic quasicrystal lasers; mode localization; nanoimprint technique; photonic quasicrystal nanopillars; selective area growth; Laser excitation; Laser modes; Measurement by laser beam; Photonics; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2012 23rd IEEE International
Conference_Location
San Diego, CA
ISSN
0899-9406
Print_ISBN
978-1-4577-0828-2
Type
conf
DOI
10.1109/ISLC.2012.6348389
Filename
6348389
Link To Document