Simulation of soft and hard breakdown of ultra-thin gate oxides

Author

Rezaee, Leila ; Selvakumar, C.R.

Author_Institution

Electr. & Comput. Eng. Dept., Waterloo Univ., Waterloo, ON

fYear

2008

fDate

4-7 May 2008

Abstract

Based on the theory of percolation, we develop a general model to simulate soft and hard breakdown of gate oxides. In this paper, we model the effect of the constant stress in reliability tests as a constant defect generation rate to simulate the time dependent dielectric breakdown. We show that the soft and hard breakdown are the results of two different natures of phase transitions, critical and quasi-critical, in thick and ultra-thin oxides, respectively.

Keywords

Weibull distribution; electric breakdown; insulating thin films; percolation; phase transformations; Weibull characteristics; constant current stress; constant voltage stress; percolation theory; phase transitions; time dependent dielectric breakdown; ultra thin gate oxides; Breakdown voltage; Carbon capture and storage; Computational modeling; Dielectric breakdown; Electric breakdown; Electrodes; Electrons; Lattices; Stress; Testing; Constant Voltage Stress (CVS) test; critical phenomena; hard breakdown; oxide breakdown; percolation; phase-transition; reliability; soft breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2008. CCECE 2008. Canadian Conference on

Conference_Location

Niagara Falls, ON

ISSN

0840-7789

Print_ISBN

978-1-4244-1642-4

Electronic_ISBN

0840-7789

Type

conf

DOI

10.1109/CCECE.2008.4564822

Filename

4564822