Title :
High Performance Double Recessed Al0,2Ga0,8As/In0,25Ga0,75As PHEMTs for Microwave Power Applications
Author :
Marsetz, W. ; Hülsmann, A. ; Kleindienst, T. ; Fischer, S. ; Demmler, M. ; Bronner, W. ; Fink, T. ; Köhler, K. ; Schlechtweg, M.
Author_Institution :
Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr 72, 79108 Freiburg, Germany, Phone +49-761-5159-641, Fax +49-761-5159-565, E-mail: marsetz@iaf.fhg.de
Abstract :
Double recessed T-gate Al0.2Ga0.8As/In0.25Ga0.75As pseudomorphic HEMTs with 0.3 ¿m gate length and different upper recess widths have been processed and analyzed. Systematic investigations concerning the correlation between drain ledge, breakdown voltage and power performance have been carried out. An optimum upper recess width has been identified which yields to a high drain-source breakdown voltage of about 24 V. A state of the art saturated output power density of 1080 mW/mm at 2 GHz is demonstrated under CW-mode of operation. DC and power measurements are performed on wafers which are not thinned.
Keywords :
Breakdown voltage; Etching; Gallium arsenide; HEMTs; MODFETs; PHEMTs; Performance analysis; Performance evaluation; Power generation; Power measurement;
Conference_Titel :
Microwave Conference, 1997. 27th European
Conference_Location :
Jerusalem, Israel
DOI :
10.1109/EUMA.1997.337932
