Title :
Selection rules for angular-resolved photoionization of single P donor atom in silicon
Author :
Klymenko, M.V. ; Remacle, F.
Author_Institution :
Dept. of Chem., Univ. of Liege, Liege, Belgium
Abstract :
In this work we analytically derive the expression of the dipole matrix elements for the photoionization process of a singe phosphorus donor atom embedded in silicon upon irradiation by linearly polarized optical pulses at different incidence angles relative to the bulk crystallographic axes. The derived expressions evidence a drastic dependence of the photoelectron angular distribution on the orientation of the polarization axis relative to the crystallographic axes of silicon. The narrowest angular distribution is obtained for a polarization directed along [001], [010] and [100] crystallographic axes.
Keywords :
atom-photon collisions; atomic moments; phosphorus; photoelectron spectra; photoionisation; silicon; P-Si; [001] crystallographic axes; [010] crystallographic axes; [100] crystallographic axes; angular-resolved photoionization; bulk crystallographic axes; dipole matrix elements; incidence angles; irradiation; linearly polarized optical pulses; photoelectron angular distribution; polarization axis; singe phosphorus donor atom; Approximation methods; Atom optics; Ionization; Optical pulses; Photonics; Silicon; Vectors;
Conference_Titel :
Advanced Optoelectronics and Lasers (CAOL), 2013 International Conference on
Conference_Location :
Sudak
Print_ISBN :
978-1-4799-0016-9
DOI :
10.1109/CAOL.2013.6657585