Title :
High efficiency X-Ku band MMIC power amplifiers
Author :
Cardullo, M. ; Page, C. ; Teeter, D. ; Platzker, A.
Author_Institution :
Motorola Inc., Phoenix, AZ, USA
Abstract :
MMIC power amplifiers with 3.5 W nominal output power and 49.5% peak power added efficiency over the 8-14 GHz band are described. Efficiency in excess of 40% is obtained over much of the band. The amplifiers utilize Raytheon´s power PHEMT technology. Details of the device performance, circuit design, and evaluation are given. The results presented represent state of the art performance for MMIC circuits over X-Ku band.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; power amplifiers; 3.5 W; 40 to 49.5 percent; 8 to 14 GHz; K-band; MMIC power amplifiers; Raytheon; SHF; X-band; power PHEMT technology; pseudomorphic HEMT; Broadband amplifiers; Circuit synthesis; Gallium arsenide; High power amplifiers; Indium gallium arsenide; MMICs; Microwave devices; PHEMTs; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.508482
