DocumentCode
2138378
Title
Fully-matched, high-efficiency Q-band 1 watt MMIC solid state power amplifier
Author
Hwang, Y. ; Chow, P.D. ; Lester, J. ; Chi, J. ; Garske, D. ; Biedenbender, M. ; Lai, R.
Author_Institution
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Volume
1
fYear
1996
fDate
17-21 June 1996
Firstpage
149
Abstract
A fully-matched, high-efficiency Q-band 1 watt MMIC power amplifier has developed. This chip utilized 2 mil-thick GaAs substrate to improve amplifier gain, power added efficiency and heat dissipation. 1 watt output power and 30% efficiency was achieved at 44 GHz.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MIMIC; gallium arsenide; impedance matching; millimetre wave amplifiers; power amplifiers; 0.15 micron; 1 W; 2 mil; 30 percent; 44 GHz; EHF; GaAs; GaAs substrate; HEMT IC; MIMIC; MM-wave amplifier; MMIC solid state power amplifier; Q-band; TRW MMIC power process; fully-matched design; heat dissipation; high-efficiency operation; Frequency; HEMTs; High power amplifiers; Loss measurement; MMICs; Power amplifiers; Power generation; Semiconductor device measurement; Solid state circuits; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.508483
Filename
508483
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