DocumentCode :
2138962
Title :
Invited talk: Emerging magnetic memories
Author :
Gallagher, William J.
Author_Institution :
International Business Machines
fYear :
2012
fDate :
20-20 April 2012
Firstpage :
1
Lastpage :
1
Abstract :
Summary form only. This talk will review emerging MRAM technologies, beginning with field-switched MRAMs that have been in product form for several years now, and extending to spin-torque MRAM under development now for higher density applications. Considerations for scaling to very small cell sizes will be discussed; in particular the importance of perpendicular magnetic anisotropy materials. Standard MRAM approaches involve the two-terminal magnetic tunnel junction device, that both stores the information and is used to read it out. A three-terminal magnetic device with potential advantages for speed will also be discussed, along with another approach dubbed "Racetrack" memory, which has the potential for three-dimensional shift-register like storage and very high densities.
Keywords :
MRAM devices; magnetic anisotropy; magnetic devices; magnetic tunnelling; shift registers; MRAM approaches; MRAM technology; field-switched MRAM; higher density applications; magnetic memory; perpendicular magnetic anisotropy materials; spin-torque MRAM; two-terminal magnetic tunnel junction device; very small cell sizes; Board of Directors; Educational institutions; Junctions; Magnetic memory; Materials; Physics; Standards organizations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2012 IEEE Workshop on
Conference_Location :
Boise, ID
ISSN :
1947-3834
Print_ISBN :
978-1-4577-1735-2
Type :
conf
DOI :
10.1109/WMED.2012.6202608
Filename :
6202608
Link To Document :
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