DocumentCode
2139122
Title
Experimental Demonstration and CAD Investigation of Class B HFET Transistor Operation at Microwave Frequencies
Author
Currás-Francos, M.C. ; Tasker, P.J. ; Fernández-Barciela, M. ; O´Keefe, S.S. ; Campos-Roca, Y. ; Sánchez, E. ; Edwards, G.D. ; Phillips, W.A.
Author_Institution
Universidad de Vigo, ETSI Telecomunicaci?n, Campus Universitario, 36207, Vigo, Spain. e-mail: curras@tsc.uvigo.es
Volume
1
fYear
1998
fDate
Oct. 1998
Firstpage
265
Lastpage
270
Abstract
A vector corrected large signal measurement system has been configured to enable all four large signal voltage traveling waves at the transistor terminals to be measured even when the transistor output is terminated with an arbitrary load impedance. With this system the user can observe and control in real time ("waveform engineer") the output current and voltage waveforms by varying the load impedance ("load-pull in the time domain"). The ability to operate HFETs in the high efficient Class B mode at 2.5 GHz has been experimentally investigated using this measurement system. In addition, this configuration also allows look-up table model generation and validation to be performed with the same system, improving significantly the model accuracy. Simulated performance using such look-up table model was in very close agreement with that measured, thus allowing the model to be used to study and interpret the measured Class B operation at microwave frequencies.
Keywords
Control systems; Frequency measurement; HEMTs; Impedance measurement; MODFETs; Microwave frequencies; Microwave measurements; Microwave transistors; Table lookup; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.337998
Filename
4139085
Link To Document