DocumentCode
2139167
Title
Leaky wave behaviour in the silicon H-guide with optically induced plasma region
Author
Satomura, Y. ; Sumida, S. ; Tsutsumi, M.
Author_Institution
Dept. of Electr. Eng., Osaka Inst. of Technol., Japan
Volume
1
fYear
1996
fDate
17-21 June 1996
Firstpage
287
Abstract
The propagation properties of leaky millimeter waves in the silicon H-guide containing optically induced plasma region have been investigated at Q band including NRD-guide behaviour. The possible optical control devices, such as switching devices from guided to leaky waves, have been examined by utilizing the transition characteristics from guided waves into leaky waves due to optical illumination.
Keywords
elemental semiconductors; nonradiative dielectric waveguides; photoconducting switches; semiconductor plasma; silicon; NRD guide; Q band; Si; guided waves; leaky waves; millimeter wave propagation; optical control device; optically induced plasma; silicon H-guide; switching device; Frequency; Lighting; Millimeter wave technology; Optical attenuators; Optical control; Optical devices; Optical waveguides; Plasma properties; Plasma waves; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.508513
Filename
508513
Link To Document