Title :
A New Consistent RF-and Noise Model with Special Emphasis on Impact Ionisation for Dual-Gate HFET in Cascode Configuration
Author :
Breder, T. ; Reuter, R. ; Daumann, W. ; Schreurs, D. ; van der Zanden, K. ; Brockerhoff, W. ; Tegude, F.J.
Author_Institution :
Solid-State Electronics Department of the Gerhard-Mercator-University Duisburg, Germany. breder@hlt.uni-duisburg.de
Abstract :
A consistent small-signal and RF-noise equivalent circuit for Dual-Gate Heterostructure Field Effect Transistors, including the influence of impact ionisation and gate-leakage current on the electronic properties, is presented. The capability of the new model is clearly demonstrated by bias-dependent investigations of the RF- and noise behaviour of InAlAs/InGaAs/InP-DGHFET.
Keywords :
Circuit noise; Equivalent circuits; Frequency; HEMTs; Impact ionization; MODFETs; Noise figure; Temperature; Voltage; Working environment noise;
Conference_Titel :
Microwave Conference, 1998. 28th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1998.338008
