DocumentCode
2139716
Title
Optimal Design Parameters for High Performant InP HEMT Frequency Doublers
Author
Schreurs, D. ; van der Zanden, K. ; Vandenberghe, S. ; Carchon, G. ; Raedt, W. De ; Nauwelaers, B.
Author_Institution
K.U.Leuven, div. ESAT-TELEMIC, Kardinaal Mercierlaan 94, B-3001 Heverlee, Belgium. e-mail: dominique.schreurs@esat.kuleuven.ac.be, tel: +32-16-321821, fax: +32-16-321986
Volume
1
fYear
1998
fDate
Oct. 1998
Firstpage
406
Lastpage
411
Abstract
HEMT frequency doublers inherently outperform FET frequency doublers due to the difference in their physical characteristics. We have determined that the best doubler performance can be obtained with pseudomorphic InP HEMTs with the gate biased for a maximal derivative of the transconductance. This optimal operating condition has been applied during the design of small-band and broadband 38 GHz coplanar waveguide MMIC frequency doublers, of which the excellent measurement results are presented.
Keywords
Coplanar waveguides; Frequency; HEMTs; Indium phosphide; MMICs; Power generation; Power harmonic filters; Power system harmonics; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1998. 28th European
Conference_Location
Amsterdam, Netherlands
Type
conf
DOI
10.1109/EUMA.1998.338023
Filename
4139110
Link To Document