Title :
Design, fabrication, and characterization of ultra high speed AlGaAs/InGaAs MODFETs
Author :
Nguyen, L.D. ; Tasker, P.J. ; Radulescu, D.C. ; Eastman, L.F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
The authors report the design, fabrication, and characterization of ultra-high-speed 0.15- mu m mushroom gate Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As modulation-doped field-effect transistors (MODFETs) with current gain cutoff frequency (f/sub T/) over 150 GHz. It is demonstrated that with proper device design and fabrication techniques, the switching speed of the AlGaAs/InGaAs (on GaAs) MODFET approaches that of the best AlInAs/InGaAs (lattice matched to InP) devices (f/sub T/=165 GHz at 0.1- mu m gate length). The devices reported here typically exhibit a maximum current density of 630 mA/mm, peak transconductance of 650 mS/mm, peak f/sub T/ of 152 GHz, and best power-gain cutoff frequency in excess of 200 GHz.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.15 micron; 152 GHz; 200 GHz; 650 mS; AlGaAs-InGaAs; MODFETs; characterization; current gain cutoff frequency; design; fabrication; maximum current density; mushroom gate; peak transconductance; power-gain cutoff frequency; switching speed; ultra high speed; Cutoff frequency; Epitaxial layers; FETs; Fabrication; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32783
