DC and RF performance of 0.1 mu m gate length Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.38/In/sub 0.62/As pseudomorphic HEMTs

Author

Mishra, U.K. ; Brown, A.S. ; Rosenbaum, S.E.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

180

Lastpage

183

Abstract

The authors report on the epitaxial layer design, device fabrication, and millimeter-wave performance of lattice-matched and pseudomorphic AlInAs-GaInAs HEMTs (high-electron-mobility transistors). The authors fabricated 0.1- mu m gate length HEMTs using pseudomorphic Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.38/In/sub 0.62/As modulation-doped epitaxial layers and compared them with lattice-matched Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As HEMTs. The pseudomorphic HEMTs demonstrated an external f/sub T/ (current-gain cutoff frequency) of 205 GHz, which is the first demonstration of a transistor with an f/sub T/>200 GHz. The V-band noise figure of an amplifier built with the lattice-matched HEMT and the pseudomorphic HEMTs was 1.3 dB and 1.5 dB, respectively. The associated gain was 9.5 dB and 8.0 dB, respectively.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 1.3 dB; 1.5 dB; 205 GHz; 8 dB; 9.5 dB; Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.38/In/sub 0.62/As; DC performance; RF performance; V-band noise figure; amplifier; current-gain cutoff frequency; epitaxial layer design; fabrication; gain; gate length; high-electron-mobility transistors; millimeter-wave performance; pseudomorphic HEMTs; Cutoff frequency; Epitaxial layers; Fabrication; Gain; HEMTs; MODFETs; Millimeter wave transistors; Noise figure; PHEMTs; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32784

Filename

32784