A Small Signal Amplifier Based on Ionic Liquid Gated Black Phosphorous Field Effect Transistor

Author

Das, Saptarshi ; Wei Zhang ; Raju Thoutam, Laxman ; Zhili Xiao ; Hoffmann, Axel ; Demarteau, Marcel ; Roelofs, Andreas

Author_Institution

Argonne Nat. Lab., Lemont, IL, USA

Volume

36

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

621

Lastpage

623

Abstract

In this letter, we report an analog small signal amplifier based on semiconducting black phosphorus (BP), the most recent addition to the family of 2D crystals. The amplifier, consisting of a BP load resistor and a BP field-effect transistor (FET), was integrated on a single flake. The gain of the amplifier was found to be ~9 and it remained undistorted for input signal frequencies up to 15 kHz. In addition, we also report record high ON current of 200 μA/μm at V_DD = -0.5 V in the BP FETs. Our results demonstrate the possibility for the implementation of BP in the future generations of analog devices.

Keywords

amplifiers; analogue circuits; field effect transistors; frequency response; phosphorus; 2D crystals; BP field effect transistor; BP load resistor; P; analog small signal amplifier; ionic liquid gated black phosphorous FET; semiconducting BP; Field effect transistors; Liquids; Logic gates; Metals; Object recognition; Resistors; Amplifier; Black Phosphorus; Black phosphorus; Field Effect Transistor; Frequency Response; Gain; amplifier; field effect transistor; frequency response; gain;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2421948

Filename

7084130