Title :
The multi-emitter Si/SiGe HBT for microwave power application
Author :
Zi-xu, Wang ; Dao-hong, Yang ; De-shu, Zou ; Chen, Shi ; Jian-xin, Chen ; Wei-Ming, Yang
Author_Institution :
Sch. of Phys. & Electron. Technol., Hubei Univ., Wuhan, China
Abstract :
The design of Si/SiGe HBT for high-frequency microwave power amplification was presented in this paper. The material profile structure of the device was designed. A comb liked structure with 6-fingered emitter was employed for the SiGe HBT. Then the device was fabricated by using the buried metal self-aligned double mesa process and high resistivity substrate in a 3 ¿m manufacture process line. The tested results indicate that the Si/SiGe power HBT reaches the parameters of ß=26, VBC¿10 V, ICM¿180 mA and fT¿3.2 GHz.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; microwave power amplifiers; silicon; 6-fingered emitter; Si-SiGe; buried metal; comb liked structure; high resistivity substrate; material profile structure; microwave power amplification; multiemitter HBT; power HBT; self-aligned double mesa process; Conductivity; Electrodes; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing processes; Silicon germanium; Sputter etching; Substrates; Wet etching;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4734499
