Bulk silicon CDMOS technology for an advanced PDP data drvier IC

In this paper, the 2^nd LEDMOS devices based on bulk silicon(BS) process for an advanced PDP data driver IC have been developed. Not only the on-state characteristics, but also the reliabilities of 2^nd LEDMOS transistors such as hot carrier effect, Kirk effect issues are improved against the 1^st LEDMOS. The devices can be realized by shrinking the cell size and partly changing the structure of the devices. And by applying the 2^nd LEDMOS to the new PDP Driver IC, we have succeeded in reducing the die size of the IC to about 70% comparing with that of 1^st one, but its number of output stages is increased by 1.33 times and the power dissipation of the new IC is reduced by more than 15% too.