Parameter determination of the Schottky barrier diode using by artificial bee colony algorithm

In this paper, a new method based on the Artificial Bee Colony (ABC) for determining the Schottky barrier height (Φ_b), ideality factor (n) and series resistance (R_S) of a Schottky barrier diode (SBD) model using forward current-voltage (I-V) characteristics, is described. For this SBD model, the Ni/n-GaAs/In Schottky barrier diode was produced in a laboratory and the I-V characteristics of the SBD were measured. The real parameters (Φ_b, n, R_S) and obtained parameters from the ABC of the SBD model were compared to determine the model´s accuracy.