DocumentCode :
2142911
Title :
An accurate modeling method utilizing application-specific statistical information and its application to SRAM yield estimation
Author :
Matsuoka, Hidetoshi ; Ikeda, Hiroshi ; Higuchi, Hiroyuki ; Tomita, Yoshinori
Author_Institution :
Fujitsu Microelectron. Ltd., Kawasaki, Japan
fYear :
2010
fDate :
22-24 March 2010
Firstpage :
22
Lastpage :
28
Abstract :
In this paper, we propose a new model construction method utilizing application specific physical information and present its application to SRAM yield calculation. The physical information is extracted as statistical distributions from past simulation results automatically. Experimental results show our method achieves 700x speed up over non modeling method and more than 10x speed up over the conventional modeling method. It requires only 5.3 samples to model a fifth order full cross term polynomial with 21 coefficients and is free from over-fitting and singular matrix problem. This modeling method can be a general approach to create models with application specific physical information.
Keywords :
SRAM chips; estimation theory; statistical analysis; SRAM yield estimation; accurate modeling method; application specific physical information; application-specific statistical information; statistical distribution; Analytical models; Circuits; Computational modeling; Data mining; Microelectronics; Monte Carlo methods; Polynomials; Random access memory; System-on-a-chip; Yield estimation; DFM; Polynomial; RSM; SRAM; Variation; Yield;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2010 11th International Symposium on
Conference_Location :
San Jose, CA
ISSN :
1948-3287
Print_ISBN :
978-1-4244-6454-8
Type :
conf
DOI :
10.1109/ISQED.2010.5450411
Filename :
5450411
Link To Document :
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