DocumentCode
2143121
Title
Modeling of the effective mobility for polysilicon thin film transistor
Author
Yan, Bing-Hui ; Li, Bin ; Yao, Ruo-He ; Zheng, Xue-Ren
Author_Institution
Sch. of Electron. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
321
Lastpage
324
Abstract
In this paper, a model of the effective mobility for the on-current of p-Si TFT is proposed, taking into account the gain size, the drain bias, the imperfection crystal scattering mechanism, and the surface-roughness scattering mechanism. It is found that at the linearity region, the effective mobility decreases with the drain bias increasing and increases with the grain size increasing. The simulation results are in a good agreement with the experimental data.
Keywords
carrier mobility; silicon; surface roughness; thin film transistors; Si; TFT; drain bias; effective mobility; gain size; imperfection crystal scattering mechanism; polysilicon thin film transistor; surface-roughness scattering mechanism; Active matrix liquid crystal displays; Current density; Grain boundaries; Grain size; Lattices; Linearity; Microelectronics; Scattering parameters; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4734528
Filename
4734528
Link To Document