DocumentCode :
2143470
Title :
LSI immunity test method by direct GND pin injection
Author :
Tsukagoshi, Tsuneo ; Kuriyama, Toshihide ; Wabuka, Hiroshi ; Watanabe, Takeshi
Author_Institution :
Jisso Res. Labs., NEC Corp., Kawasaki, Japan
Volume :
1
fYear :
2003
fDate :
18-22 Aug. 2003
Firstpage :
248
Abstract :
This paper proposed a method to test the immunity of LSIs where RF noise is injected into the GND pin of an LSI. We concluded that the GND pin injection test we propose is more suitable for evaluating actual LSI immunity against RF noise than the VDD pin injection test based on conventional Direct RF Power Injection (DPI).
Keywords :
immunity testing; integrated circuit testing; large scale integration; radiofrequency interference; GND pin injection test; LSI immunity; RF noise; VDD pin injection test; direct GND pin injection; direct RF power injection; immunity test method; Cellular phones; Electromagnetic compatibility; Electrostatic discharge; Immune system; Immunity testing; Large scale integration; National electric code; Pins; Radio frequency; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7835-0
Type :
conf
DOI :
10.1109/ISEMC.2003.1236600
Filename :
1236600
Link To Document :
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