Harmonic distortion in MOSFETs calculated by successive integration of the transfer characteristics

The harmonic distortion of experimental n-MOSFETs with different channel lengths has been studied from their measured transfer characteristics, using a recently proposed alternative mathematical procedure called ¿full successive integrals method¿ (FSIM). The FSIM allows accurate calculation of the Fourier coefficients (Hk) and hence traditional figures of merit such as THD, HDk, IP2 and IP3 can be readily determined. The FSIM circumvents the use of AC analysis (avoids Fourier analysis), and additionally acts as a very efficient filter for the noise which is inherently present in measurement data. Furthermore, the FSIM can successfully determine the harmonic distortion associated with any amplitude of the input signal.