The design, fabrication and characterization of GaAs-based RTT with groove and self-aligned Schottky gate structure

Author

Guo, Wei-Lian ; Niu, Ping-Juan ; Li, Xiao-yun ; Miao, Chang-Yun ; Wang, Wei ; Yu, Xin ; Shang, Yao-Hui ; Feng, Zhen ; Tian, Guo-Ping ; Li, Ya-Li ; Liu, Yong-Qiang ; Yuan, Ming-Wen ; Li, Xiao-Bai

Author_Institution

Sch. of Inf. & Commun., Tainjin Polytech. Univ., Tainjin, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

571

Lastpage

574

Abstract

In this paper, the design of material structure and device structure , fabrication processing and characterization on GaAs based Resonant Tunneling Transistor (RTT) with groove and self-aligned gate structure have been described completely and systematically .The experimental results measured from our fabricated RTT show that : the maximum value of Peak to Valley Current Ratio (PVCR) is 46, the transconductance g_m is in a range of 1.3~8.0 ms, the cutoff frequency f_Tgm and speed index S are 1.59 GHz and 13.5 ps/V respectively .

Keywords

III-V semiconductors; Schottky gate field effect transistors; electrical conductivity; gallium arsenide; resonant tunnelling; resonant tunnelling transistors; GaAs; cut-off frequency; device structure design; fabrication processing; frequency 1.59 GHz; gate controlled structure; groove gate structure; material structure design; peak-to-valley current ratio; quantum tunneling effect; resonant tunneling transistor; self-aligned Schottky gate structure; transconductance; Current measurement; Cutoff frequency; Electrodes; Fabrication; Gallium arsenide; Resonant tunneling devices; Satellite broadcasting; Shape; Transconductance; Voltage; GaAs based quantum tunneling effect; Resonant Tunneling Transistor (RTT); gate controlled structure; sckottky gate;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4734594

Filename

4734594